Hall-effect and resistivity measurements in copper–indium–gallium–selenium–tellurium solid solutions Academic Article uri icon

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abstract

  • Hall-effect and resistivity measurements of semiconductor alloys of the type Culn1−yGaySe2(1−x)Te2x have been made over the temperature range 77–300 K. All materials were p-type with mobilities in the range 1 < μ < 10 cm2/V∙s. The observed electrical properties are interpreted in terms of the presence of intrinsic defects arising from dissimilar evaporation of the constituent elements of the materials during melting and annealing stages.

publication date

  • June 1, 1985