Journal article
Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis
Abstract
Block copolymer lithography is a promising approach to massively parallel, high-resolution, and low-cost patterning, but the inherently low etch resistance of polymers has limited its applicability to date. In this work, this challenge is overcome by dramatically increasing the plasma etch contrast of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) using spatially localized sequential infiltration synthesis (SIS) of alumina. The PMMA …
Authors
Tseng Y-C; Peng Q; Ocola LE; Elam JW; Darling SB
Journal
The Journal of Physical Chemistry C, Vol. 115, No. 36, pp. 17725–17729
Publisher
American Chemical Society (ACS)
Publication Date
September 15, 2011
DOI
10.1021/jp205532e
ISSN
1932-7447