Computational modeling of transport phenomena in chemical vapor deposition

Fluid flow, heat and mass transport processes in a two-dimensional converging channel with a heated susceptor are investigated numerically for various pertinent parameters. A model is developed to analyze the impact of the transport mechanisms on the deposition process of a typical chemical vapor deposition. Discretization of the governing equations is achieved using a finite element scheme based on the Galerkin method of weighted residuals. Comparisons with previously published work on the basis of special cases are performed and found to be in excellent agreement. Various results for the streamlines, isotherms, and isoconcentrations are presented and discussed for different parametric values. The results of the present investigation show that the tilted susceptor can produce a greater deposition and a more even distribution of material than a non-tilted susceptor. Moreover, the tilted susceptor is found to suppress the effect of transverse recirculation regions inside the reactor.