Poly(2,5‐bis(2‐thienyl)‐3,6‐dialkylthieno [3,2‐b]thiophene)s—High‐Mobility Semiconductors for Thin‐Film Transistors

Field‐effect transistor properties, structural design, synthesis, and characterization of the poly(2,5‐bis(2‐thienyl)‐3,6‐dialkylthieno[3,2‐b]thiophene) thin‐film semiconductors shown in the figure are described. Using low‐temperature solution fabrication of channel semiconductors under ambient conditions, a mobility of 0.25 cm2 V–1 s–1 and a current on/off ratio of 107 are obtained.