Journal article
Redox driven conductance changes for resistive memory
Abstract
The relationship between bias-induced redox reactions and resistance switching is considered for memory devices containing TiO2 or a conducting polymer in “molecular heterojunctions” consisting of thin (2–25 nm) films of covalently bonded molecules, polymers, and oxides. Raman spectroscopy was used to monitor changes in the oxidation state of polythiophene in Au/P3HT/SiO2/Au devices, and it was possible to directly determine the formation and …
Authors
Shoute LCT; Pekas N; Wu Y; McCreery RL
Journal
Applied Physics A, Vol. 102, No. 4, pp. 841–850
Publisher
Springer Nature
Publication Date
March 2011
DOI
10.1007/s00339-011-6268-5
ISSN
0947-8396