Ion Transport and Switching Speed in Redox-Gated 3-Terminal Organic Memory Devices

The dynamics of redox gated organic memory devices based on dynamic doping of polythiophene were examined in detail in order to improve “write” and “erase” speed and determine ultimate performance. A 3-terminal geometry similar to a field effect transistor provided a source/gate circuit which reversibly oxidized a polythiophene polymer to cause a large increase in conductance between the source and drain electrodes. The devices were cycled for >…