Journal article
MOSFET 1/ f noise model based on mobility fluctuation in linear region
Authors
Xu J; Deen MJ
Journal
Electronics Letters, Vol. 38, No. 9, pp. 429–431
Publisher
Institution of Engineering and Technology (IET)
Publication Date
April 25, 2002
DOI
10.1049/el:20020282
ISSN
0013-5194