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Charge transfer efficiency in proton damaged CCD's
Journal article

Charge transfer efficiency in proton damaged CCD's

Abstract

We have performed detailed measurements of the charge transfer efficiency (CTE) in a thinned, backside-illuminated imaging charge-coupled device (CCD). The device had been damaged in three separate sections by proton radiation typical of that which a CCD would receive in space-borne experiments, nuclear imaging, or particle detection. We examined CTE as a function of signal level, temperature, and radiation dose. The dominant factor affecting …

Authors

Hardy T; Murowinski R; Deen MJ

Journal

IEEE Transactions on Nuclear Science, Vol. 45, No. 2, pp. 154–163

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

April 1, 1998

DOI

10.1109/23.664167

ISSN

0018-9499