A New Method for the Channel-Length Extraction in MOSFETs With Sub-2-nm Gate Oxide Journal Articles

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authors

Marin, M
Deen, Jamal
deMurcia, M
Llinares, P
Vildeuil, J-C

status

published

publication date

April 2004

has subject area

0906 Electrical and Electronic Engineering (FoR)
Applied Physics (Science Metrix)

published in

IEEE Electron Device Letters Journal