Journal article
A New Method for the Channel-Length Extraction in MOSFETs With Sub-2-nm Gate Oxide
Abstract
A simple method to extract the effective channel length in deep-submicrometer devices with sub-2-nm gate oxide thickness is presented. The method uses the measured gate current from accumulation to strong inversion. It is easy to implement, fast, and accurate.
Authors
Marin M; Deen MJ; de Murcia M; Llinares P; Vildeuil J-C
Journal
IEEE Electron Device Letters, Vol. 25, No. 4, pp. 202–204
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
4 2004
DOI
10.1109/led.2004.825157
ISSN
0741-3106