Journal article
Digital characteristics of CMOS devices at cryogenic temperatures
Abstract
The results of measurements of the digital characteristics of CMOS devices as a function of temperature between 77 and 300 K and of supply voltage between 3 and 20 V are presented. Using a fixed supply of 5 V, the low noise margin decreased from 2.54 to 2.11 V, but the high noise margin increased from 2.18 to 2.40 V as the temperature was increased from 77 to 300 K. On lowering the temperature from 300 to 77 K, both V/sub II/ and V/sub IH/ …
Authors
Deen MJ
Journal
IEEE Journal of Solid-State Circuits, Vol. 24, No. 1, pp. 158–164
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
1989
DOI
10.1109/4.16315
ISSN
0018-9200