Journal article
Effects of forward biasing the substrate on thelowtemperature behaviour of n -MOS transistors
Authors
De la Hidalga-W. FJ; Deen MJ; Gutierrez-D. EA; Balestra F
Journal
Electronics Letters, Vol. 33, No. 17, pp. 1456–1458
Publisher
Institution of Engineering and Technology (IET)
Publication Date
August 14, 1997
DOI
10.1049/el:19970982
ISSN
0013-5194