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Magnetoconductance at tunnel junction contacts...
Journal article

Magnetoconductance at tunnel junction contacts with disordered granular materials

Abstract

We explore the magnetoconductance that can be generated at tunnel junction contacts with disordered normal (DN) materials. We use self-assembled 1,4-butanedithiol-linked gold nanoparticle films as a prototype DN material and different types of tunnel junction contacts, namely one native to a gold electrode/1,4-butanedithiol interface and another naturally occurring at aluminum/aluminum oxide layer. For control measurements, we also study normal metal and superconducting contacts above and below critical temperature Tc in place of tunnel junction contacts. We focus on a nanoparticle film regime where contact resistance is significant, i.e. when films are metallic and have low resistance. In this regime, superconducting contacts yield a zero-field magnetoconductance enhancement due to “reflectionless tunneling” below Tc. Normal metal contacts do not yield significant magnetoconductance. This is also true for superconducting contacts above Tc when the superconductor becomes a normal metal. When a tunnel junction is present between the normal metal and the DN material, a ~10% zero-field magnetoconductance suppression appears at temperatures below ~10K. We propose a mechanism for the tunnel junction mediated magnetoconductance based on coherent back scattering in disordered granular materials, percolation and a local nature of current flow across planar tunnel junctions.

Authors

Tie M; Joanis P; Feng H; Feng M; Niewczas M; Dhirani A-A

Journal

Thin Solid Films, Vol. 534, , pp. 666–672

Publisher

Elsevier

Publication Date

May 1, 2013

DOI

10.1016/j.tsf.2013.02.012

ISSN

0040-6090

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