Low temperature investigations of e⁻‐irradiated GaAs Journal Articles

abstract

• AbstractPositron lifetime measurements have been performed on electron irradiated chromium doped semi‐insulating GaAs as a function of annealing between 139 and 908 K. Trapping at negatively charged GaAs defects and by a vacancy mixture dominated by trivacancies took place in the as‐irradiated state. Upon annealing around 210 K divacancies were formed from the trivacancies as caused by migrating arsenic interstitials. Complete trapping prevailed up to 530 K but decreased then rapidly at higher temperatures due to the migration of divacancies which also remove the GaAs defects.

authors

• Mascher, Peter
• Kerr, D
• Dannefaer, S

status

• published 

publication date

• February 1988

has subject area

• 0306 Physical Chemistry (incl. Structural) (FoR)
• 0601 Biochemistry and Cell Biology (FoR)
• Applied Physics (Science Metrix)

published in

• Crystal Research and Technology  Journal

keywords

• Crystallography
• Physical Sciences
• Science & Technology

Digital Object Identifier (DOI)

• 10.1002/crat.2170230224

start page

• 247

end page

• 251

volume

• 23

issue

• 2