Wet Chemical Etching for V‐grooves into InP Substrates

A systematic study has been performed on the production of V‐grooves in (100) InP substrates by wet chemical etching. The dissolution process and its dependence on etchant, etch mask, and its accuracy of alignment relative to the [011] or [01¯1] directions has been analyzed. Consequently, the conditions necessary to achieve V‐grooves having (111)A, (111)B, and (211)A sidewalls has been established.