Photoluminescence Study of an Er-Doped Si-Rich SiO x Film: Effects of Annealing Gas Ambients and Double-Step Processes

We have studied photoluminescence (PL) from samples of Er-doped Si-rich silicon oxide (SRSO) annealed at for in , (FG1), (FG2), and , respectively, or subjected to double-step annealing processes. For the given film composition, the PL spectra of the samples annealed in , FG1, or FG2 are similar in shape but reveal small differences in the intensities of emission bands; while the spectra are qualitatively different in the case of oxidation. By …