Positron-annihilation study of vacancy defects in InAs

Positron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×1016 cm-3 . Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps. The defects in these samples have divacancy character, but change their configuration at low temperatures to a …