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Defect Depth Profile in CdTe :  CI  by Positron...
Journal article

Defect Depth Profile in CdTe :  CI  by Positron Annihilation

Abstract

Depth resolved defect profiles have been obtained from samples using both positron lifetime spectroscopy and Doppler‐broadening of annihilation radiation spectra. The dominant defect species was identified as the chlorine‐vacancy complex or A center. The defect concentration in the bulk was found to be , with a much higher near‐surface concentration, in agreement with chlorine concentration profiles obtained using the radiotracer sectioning technique. It is proposed that the vacancy is involved in the diffusion of atoms. ©2000 The Electrochemical Society

Authors

Peng ZL; Simpson PJ; Mascher P

Journal

Electrochemical and Solid-State Letters, Vol. 3, No. 3, pp. 150–152

Publisher

The Electrochemical Society

Publication Date

March 1, 2000

DOI

10.1149/1.1390985

ISSN

1099-0062

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