Characterization of SiO<sub>x</sub>/Si/SiO<sub>x</sub> Coated n-InP Facets of Semiconductor Lasers Using Spatially-Resolved Photoluminescence

Maps of the room temperature photoluminescence (PL) yield from SiO x /Si/SiO x coated semiconductor laser facets were made during the course of accelerated lifetesting. A localized degradation of the PL yield was detected under the active region after aging, which signifies a localized decrease of the radiative recombination efficiency. The surface reflectance was also investigated and was found to be uncorrelated with the localized degradation of the PL yield.

Characterization of SiO_x/Si/SiO_x Coated n-InP Facets of Semiconductor Lasers Using Spatially-Resolved Photoluminescence Journal Articles