Green Zn2SiO4:Mn thin-film electroluminescence on silicon substrates

Bright electroluminescence has been achieved on silicon substrates for the first time using Zn 2 SiO 4 :Mn thin films that were RF magnetron sputtered. A brightness of over 16 foot lambert (fL) was observed at 400 Hz and 260 V, with a steep brightness–voltage behaviour characteristic of ZnS electroluminescence. A multiplexed electroluminescent display is now feasible using Zn 2 SiO 4 :Mn.