Journal article
Green Zn2SiO4:Mn thin-film electroluminescence on silicon substrates
Abstract
Bright electroluminescence has been achieved on silicon substrates for the first time using Zn 2 SiO 4 :Mn thin films that were RF magnetron sputtered. A brightness of over 16 foot lambert (fL) was observed at 400 Hz and 260 V, with a steep brightness–voltage behaviour characteristic of ZnS electroluminescence. A multiplexed electroluminescent display is now feasible using Zn 2 SiO 4 :Mn.
Authors
Xiao T; Liu G; Adams M; Kitai AH
Journal
Canadian Journal of Physics, Vol. 74, No. 3-4, pp. 132–135
Publisher
Canadian Science Publishing
Publication Date
March 1, 1996
DOI
10.1139/p96-020
ISSN
0008-4204