Control of GaAs nanowire morphology and crystal structure

The morphology and crystal structure of Au-seeded GaAs nanowires (NWs) grown by molecular beam epitaxy were investigated as a function of the temperature, V/III flux ratio, and Ga flux. Low and intermediate growth temperatures of 400 and 500 °C resulted in a strongly tapered morphology, with stacking faults occurring at an average rate of 0.1 nm(-1). NWs with uniform diameter and the occurrence of crystal defects reduced by more than an order …