publication venue for
- Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition. 41. 2023
- Design and fabrication of color-generating nitride based thin-film optical filters for photovoltaic applications. 41. 2023
- Tunable emission from Eu:SiOxNy thin films prepared by integrated magnetron sputtering and plasma enhanced chemical vapor deposition. 40:043402. 2022
- Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells. 34:041304. 2016
- Observation of ultraslow stress release in silicon nitride films on CaF2. 33. 2015
- Mechanical and phase stability of TiBC coatings up to 1000 °C. 32. 2014
- Friction and counterface wear influenced by surface profiles of plasma electrolytic oxidation coatings on an aluminum A356 alloy. 30. 2012
- Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature. 29. 2011
- Photoluminescence from Er-doped Si-rich Si oxides deposited by magnetron sputtering in Ar or Ar+H2 plasmas. 27:101-108. 2009
- Properties of octadecanethiol self-assembled monolayers deposited on GaAs from liquid and vapor phases. 26:1425-1431. 2008
- Room temperature Cu–Cu direct bonding using surface activated bonding method. 21:449-453. 2003
- Growth of dense SiC films on Si at medium temperatures by pulsed laser deposition. 19:2691-2694. 2001
- Evaluation of plasma and thermal sources for atomic hydrogen-assisted epitaxy of InP. 16:590-594. 1998
- Etching of InP surface oxide with atomic hydrogen produced by electron cyclotron resonance. 13:2146-2150. 1995
- Low temperature radio frequency sputter deposition of TiN thin films using optical emission spectroscopy as process monitor. 12:83-89. 1994
- Effects of hydrogen adsorption on the performance of the W(001) spin-polarized low-energy electron diffraction electron polarimeter. 10:388-393. 1992
- Growth and characterization of silicon nitride films produced by remote microwave plasma chemical vapor deposition. 9:2594-2601. 1991
- NbN thin films reactively sputtered with a high‐field direct‐current magnetron. 6:2299-2303. 1988
- Homogenization of tantalum pentoxide reference materials and the establishment of a reference standard for sputtering fluxes and for cross section measurements in nuclear instruments. 5:1988-1993. 1987
- Nitrogen sorption on titanium: Reconstruction of the subsurface composition profile using low- and high-energy Auger data. 5:1345-1351. 1987
- M 2,3 electron energy loss studies of Ni(100) at small scattering angles. 4:1372-1375. 1986
- Exploring the collective dynamics of lipid membranes with inelastic neutron scattering 2006
- Metal-organic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates 2006
- Charge localization in polymeric metal-oxide-semiconductor capacitors 2006
- Evaluation of complementary metal-oxide semiconductor based photodetectors for low-level light detection 2006
- Fabrication of out-of-plane micromirrors in silicon-on-insulator planar waveguides 2006
- Growth and characterization of GaAsSb metamorphic samples on an InP substrate 2006
- Growth of CdTe∕Si(100) thin films by pulsed laser deposition for photonic applications 2006
- H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown SiyO1−y:H(y>1∕3) thin films annealed in (Ar+5%H2) 2006
- Microelectromechanical system based variable optical attenuator by vertically bending waveguides 2006
- Parasitics-aware layout design of a low-power fully integrated complementary metal-oxide semiconductor power amplifier 2006
- Rapid thermal annealing of InAs∕GaAs quantum dots with a low-temperature-grown InGaP cap layer 2006
- Signal and noise modeling and analysis of complementary metal-oxide semiconductor active pixel sensors 2006
- Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response 2006
- Temperature effects in complementary metal-oxide semiconductor microwave distributed amplifiers 2006
- Ultrawideband radar imaging system for biomedical applications 2006
- Very low-voltage operation capability of complementary metal-oxide-semiconductor ring oscillators and logic gates 2006
- Study of the optical properties of SiOxNy thin films by effective medium theories 2004
- Modeling of mushroom waveguide photodetector 2004
- Optical and compositional characterization of SiOxNy and SiOx thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition 2004
- Optical modulator in silicon-on-insulator with a low thermal signature 2004
- Variable current transport in polymer thin film transistors 2004
- Characterization of gadolinium and lanthanum oxide films on Si (100) 2002
- Control of dielectric cap induced band-gap shift in 1.55 μm laser structures 2002
- Effect of interface trapping on the frequency response of a photodetector 2002
- On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver 2002
- Sub-micron high speed complementary metal-oxide semiconductor compatible metal-semiconductor-metal photodetector 2002
- Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters 2000
- Hot-carrier effects on radio frequency noise characteristics of LDD n-type metal–oxide–semiconductor field effect transistors 2000
- Two-dimensional gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication avalanche photodiodes modeled by a simplified stochastic approach 2000
- Work function modification of indium–tin–oxide used in organic light emitting devices 1999
- Characterization of annealed high-resistivity InP grown by He-plasma-assisted epitaxy 1998
- Direct calculation of metal–oxide–semiconductor field effect transistor high frequency noise parameters 1998
- Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistor 1998
- Si 1s x-ray absorption spectra of epitaxial Si–Ge atomic layer superlattice and alloy films 1994
- Structures of selected boranes and carboranes 1992
- Boron K‐shell spectroscopy of boron‐doped silicon 1991
- Quantitative surface analysis with elemental standards: Surface roughness limitations 1991
- X-ray absorption fine structure studies of buried Ge–Si interfaces 1991
- Near‐edge electron energy loss fine structure: Core excitation of chemisorbed molecules in the laboratory 1990
- X-ray absorption of As low-energy ion implanted into Si(100) grown by molecular-beam epitaxy 1990
- Summary Abstract: EXELFS in the reflection electron energy loss spectra of Cu and Ni 1983