selected scholarly activity
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conferences
- Subsurface junction field effect transistor (SJFET). Technical Digest - International Electron Devices Meeting. 787-790. 1980
- DEPOSITION OF GOLD ONTO SILICON SURFACES AND SUBSEQUENT REDISTRIBUTION DURING THERMAL TREATMENTS.. 683-691. 1973
- MEASUREMENT IN DIFFUSED LAYERS OF MINORITY CARRIER RECOMBINATION-GENERATION AND TRANSPORT AND OF SURFACE PROPERTIES.. 561-569. 1973
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journal articles
- Bipolar device technology challenge and opportunity. Canadian Journal of Physics. 63:683-692. 1985
- Subsurface junction field effect transistor. IEEE Transactions on Electron Devices. 28:1447-1454. 1981
- Light-ion neutralization behavior in the 25 to 150 keV range using a medium-energy ion-reflection spectrometer. Surface Science Letters. 100:A382-A382. 1980
- Light-ion neutralization behavior in the 25 to 150 keV range using a medium-energy ion-reflection spectrometer. Surface Science. 100:14-27. 1980
- Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics. MICROELECTRONICS JOURNAL. 10:66-66. 1979
- ChemInform Abstract: REPEATED REMOVAL OF THIN LAYERS OF SILICON BY ANODIC OXIDATION. ChemInform. 7:no-no. 1976
- The Redistribution of Gold during the Growth of an Oxide or of Phosphosilicate Glass on Contaminated Silicon Wafers. Journal of the Electrochemical Society. 123:1560-1565. 1976
- Repeated Removal of Thin Layers of Silicon by Anodic Oxidation. Journal of the Electrochemical Society. 123:1404-1409. 1976
- Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics. Solid-State Electronics. 19:365-368. 1976
- ChemInform Abstract: THE SOLID SOLUBILITY OF GOLD IN DOPED SILICON BY OXIDE ENCAPSULATION. ChemInform. 5:no-no. 1974
- The Solid Solubility of Gold in Doped Silicon by Oxide Encapsulation. Journal of the Electrochemical Society. 121:1350-1350. 1974
- Polycrystalline silicon resistors for integrated circuits. Microelectronics Reliability. 12:416-416. 1973
- Polycrystalline silicon resistors for integrated circuits. Solid-State Electronics. 16:701-708. 1973
- A Computer Controlled Automatic System for Measuring the Conductivity and Hall Effect in Semiconducting Samples. Review of Scientific Instruments. 42:1797-1807. 1971
- Abrupt p-n junctions at arbitrary injection levels. Solid-State Electronics. 12:425-431. 1969
- THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING. Applied Physics Letters. 14:102-103. 1969
- Effective mass and intrinsic concentration in silicon. Microelectronics Reliability. 7:166-166. 1968
- InSb p+-n junctions in forward bias. Solid-State Electronics. 11:343-352. 1968
- Effective mass and intrinsic concentration in silicon. Solid-State Electronics. 10:1039-1051. 1967
- The Metallic Etching of Indium Antimonide and Germanium. Journal of the Electrochemical Society. 114:635-635. 1967
- Polarity effects in III–V semiconducting compounds. Journal of Physics and Chemistry of Solids. 26:1561-1570. 1965
- The solubility of indium antimonide in tin. Solid-State Electronics. 8:825-827. 1965
- Polarity effects in III–V semiconducting compounds. Solid State Communications. 3:lxxxiii-lxxxiii. 1965
- A technique for making alloy p-n junctions in InSb. Solid-State Electronics. 8:113-117. 1965
- Polarity Effects in InSb Alloyed p-n Junctions. Journal of Applied Physics. 36:176-180. 1965
- A cardiac output computer for the rapid analysis of indicator dilution curves. Medical and Biological Engineering and Computing. 1:203-215. 1963
- A Cardiac Output Computer for the Rapid Analysis of Indicator-Dilution Curves. IEEE Transactions on Biomedical Engineering. 10:16-23. 1963